From the Kondo regime to the mixed-valence regime in a single-electron transistor
From the Kondo regime to the mixed-valence regime in a single-electron transistor
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DOI：
10.1103/physrevlett.81.5225
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发表时间：
1998-12-07
影响因子：
8.6
通讯作者：
Meirav, U
中科院分区：
文献类型：
--
作者：
Goldhaber-Gordon, D;Göres, J;Meirav, U
我们证明了低温下通过单电子晶体管的电导与平衡安德森模型的预测在定量上一致。近藤效应是当一个未配对的电子被限定在晶体管中时观察到的。将未配对电子的能量调整到邻近引线的费米能级，会在近藤模型和安德森模型的混合价态之间产生交叉。
We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. The Kondo effect is observed when an unpaired electron is localized within the transistor. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a crossover between the Kondo and mixed-valence regimes of the Anderson model.