Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3
Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3
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DOI：
10.3390/cryst10090736
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发表时间：
2020-08
期刊：
影响因子：
2.7
通讯作者：
W. Yi;Jun Chen;T. Sekiguchi
中科院分区：
文献类型：
--
作者：
W. Yi;Jun Chen;T. Sekiguchi
利用电子束感生电流（EBIC）和阴极发光（CL）研究了SrTiO_3中位错的电学和光学行为。通过EBIC测温，得到了位错的电复合活性和缺陷能级。位错的电阻开关的澄清偏置依赖EBIC。用CL作图得到了位错周围氧空位的分布。讨论了开关、位错和氧空位之间的关系。
Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.