Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe2Transistors
Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe2Transistors
复制标题
多层 MoTe(2) 晶体管中可控局部掺杂的电性能调制
DOI：
10.1002/aelm.202000532
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发表时间：
2020-09-11
影响因子：
6.2
通讯作者：
Zhang, Wenjing
中科院分区：
文献类型：
--
作者：
Ke, Yuxuan;Song, Xuefen;Zhang, Wenjing
已经发现替代原子、表面改性、静电门控和接触电极工程可以在2D材料中诱导掺杂效应。然而，掺杂的水平、面积、位置和图案形状没有得到很好的控制，因此，很难用这些掺杂方法产生高性能、多功能的器件和逻辑电路。在这里，它被发现，一个无损伤的，高度可控的，局部掺杂的多层二碲化钼（MoTe 2）薄片可以实现与高度可控的激光束扫描照射。通过调整扫描激光束的参数，可以很好地控制掺杂水平、面积、位置和图案形状。通过可控掺杂，MoTe2基晶体管的亚阈值摆幅可以降低一个数量级，形成良好匹配的p型和n型输运，阈值电压可以被调制，从而实现了增益高达242的互补反相器，这是目前报道的基于二维材料的反相器中最高的。通过控制掺杂位置，可以使MoTe（2）晶体管产生稳定的负极化特性，并成功地实现了倍频。因此，提出多层MoTe（2）中的位置控制局域掺杂可能在未来的纳米电子学中提供令人兴奋的应用潜力。
It has been found that substitutional atoms, surface modification, electrostatic gating, and contact electrode engineering can induce doping effects in 2D materials. However, the doping level, area, position, and pattern shape are not well controlled; thus, it is hard to generate high-performance, multifunctional devices and logic circuits with these doping approaches. Here, it is found that a damage-free, highly controllable, local doping in multilayer molybdenum ditelluride (MoTe2) flakes can be realized with highly controllable laser beam scanning irradiation. The doping level, area, position, and pattern shape are well controlled by adjusting parameters of the scanning laser beam. With the controllable doping, the subthreshold swing of MoTe2-based transistors can be decreased by one order of magnitude, well-matched p-type and n-type transports can be formed, and threshold voltages can be modulated, then a complementary inverter with ultra-high gain approximate to 242 is realized, which is the highest in all reported inverters based on 2D materials. It is also found that a stable negative transconductance behavior can be created for the MoTe(2)transistor by controlling doping position, then a frequency doubler is successfully demonstrated. Therefore, it is proposed that the position-controlled local doping in multilayer MoTe(2)may offer exciting application potentials in future nanoelectronics.