Growth and study of properties of pure and rare-earth-doped KMgF3 crystals

Growth and study of properties of pure and rare-earth-doped KMgF3 crystals
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DOI:
10.1016/0022-0248(96)00095-4
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发表时间:
1996-09-01
影响因子:
1.8
通讯作者:
Shiran, NV
Shiran, NV
中科院分区:
材料科学3区
文献类型:
--
作者:
Komar, VK;Gektin, AV;Shiran, NV

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本文介绍了纯KMgF3晶体和稀土掺杂KMgF3晶体的生长方法及其性能研究。结果表明,氧杂质的变化使得这些晶体可以用作有效的闪烁体、电离和紫外线辐射的灵敏剂量计以及激光材料。
A method of growing pure and RE-doped KMgF3 crystals and a study of their properties are described. It is shown that the variation of oxygen impurity allows the use of these crystals as effective scintillators, sensitive dosimeters for ionizing and UV radiation and as laser materials.