Surface potentials of magnetron sputtered transparent conducting oxides
Surface potentials of magnetron sputtered transparent conducting oxides
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DOI：
10.1016/j.tsf.2009.05.057
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发表时间：
2009-12-15
期刊：
影响因子：
2.1
通讯作者：
Mason, T. O.
中科院分区：
文献类型：
--
作者：
Klein, A.;Koerber, C.;Mason, T. O.
给出了用光电子能谱在透明导电氧化物表面测量的功函数、电离势（电子亲和力）和费米能级位置。采用磁控溅射法制备了ZnO、ZnO:Al、SnO2、SnO2:Sb、In2O3、In2O3:Sn和In2O3:（Zn,Sn）薄膜。溅射气体中氧含量对费米能级位置的影响很大。ZnO的电离势和功函数受表面取向的影响较大。相比之下，sno2基和in2o3基材料在表面氧化和还原的作用下，电离势和功函数发生了明显的变化。与SnO2不同，in2o3基TCO表面的氧化不会在沉积过程中发生，但可以通过沉积后处理引起。(C) 2009 Elsevier B.V.版权所有
Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO2, SnO2:Sb, In2O3, In2O3:Sn, and In2O3:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO2-based and In2O3-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO2, the oxidation of the In2O3-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments. (C) 2009 Elsevier B.V. All rights reserved.