Observation of vacancy ordering structure in GaP nanobelts
Observation of vacancy ordering structure in GaP nanobelts
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DOI：
10.1063/1.1641178
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发表时间：
2004-01
影响因子：
3.2
通讯作者：
Jin-Sheng Tsai;Fu-Rong Chen;J. Kai;Chia-Chun Chen;R. Huang;Mingshan Wang;G. Huang;Gia-Gia Guo-Gia;Mingli Yu
中科院分区：
文献类型：
--
作者：
Jin-Sheng Tsai;Fu-Rong Chen;J. Kai;Chia-Chun Chen;R. Huang;Mingshan Wang;G. Huang;Gia-Gia Guo-Gia;Mingli Yu
采用高温热蒸发法在Si衬底上制备了以Fe 2 O3为催化剂的III-V族半导体GaP纳米带。这些纳米带通常具有50至600 nm的宽度和高达几百微米的长度。它们的厚度从10到40 nm不等。在差距纳米带的边缘附近观察到空位有序结构。空位有序结构进行了分析，使用高分辨率透射电子显微镜，电子衍射图案，和计算机模拟。差距带中空位有序结构的晶胞为正交晶系，晶格参数a=3.767 A，B=6.525 A，c=18.456 A，α=β=γ=90°。在[111]投影中，结构是R3 x3 120°的上部结构，而在[211]投影中，它在（113）和（131）平面中都表现出上部结构。这种缺陷结构也可以看作是一种长周期结构，在（111）层积平面上具有超结构。
III–V semiconductor GaP nanobelts were synthesized with a Fe2O3 catalyst on Si substrates by thermal evaporation at high temperatures. These nanobelts, typically, have a width from 50 to 600 nm and a length of up to several hundred micrometers. Their thickness varies from 10 to 40 nm. A vacancy ordering structure was observed near the edge of the GaP nanobelts. The vacancy ordering structure was analyzed using high-resolution transmission electron microscopy, electron diffraction patterns, and computer simulation. The unit cell of the vacancy ordering structure in the GaP belt is orthorhombic with lattice parameters a=3.767 A, b=6.525 A, c=18.456 A, and α=β=γ=90°. In the [111] projection, the structure is a R3x3 120° superstructure, while in the [211] projection, it exhibits a superstructure in both the (113) and (131) planes. This defective structure can also be visualized as a long period structure with a superstructure in the (111) stacking plane.