Nanoscale Patterning of Zinc Oxide from Zinc Acetate Using Electron Beam Lithography for the Preparation of Hard Lithographic Masks
Nanoscale Patterning of Zinc Oxide from Zinc Acetate Using Electron Beam Lithography for the Preparation of Hard Lithographic Masks
复制标题
DOI：
10.1021/acsanm.0c02756
复制
发表时间：
2021-01-22
影响因子：
5.9
通讯作者：
Winpenny, Richard E. P.
中科院分区：
文献类型：
--
作者：
Chaker, Ahmad;Alty, Hayden R.;Winpenny, Richard E. P.
提出了一种用于氧化锌（ZnO）的纳米级图案化的方法，使用电子束（e-beam）光刻用于未来的纳米电子器件和硬光刻掩模。使用扫描电子显微镜（SEM）曝光乙酸锌（Zn 4 O（CH 3COO）（6））膜，导致Zn 4 O（CH 3COO）（6）分解成ZnO。利用电子束对Zn_4 O（CH_3COO）（6）的曝光成功地在硅上制备了间距为40 nm的12 nm氧化锌线。使用X射线光谱（XPS）研究乙酸锌（电子束曝光前的膜）和ZnO（电子束曝光后的膜）的化学组成。Zn 2 p位移峰和O Is贡献证实了暴露后乙酸锌分解成氧化锌。为了确认这种向ZnO的转变，测定膜的光学带隙并测量膜的电阻率。电阻率和光学带隙的结果表明，在室温下的带隙为3.31 eV和91.5 Ω cm的电阻率的ZnO膜的转变。ZnO图案被用作硬掩模来蚀刻硅，并且其对于使用SF6和C4 F8的干法蚀刻硅显示出27：1的良好选择性。
An approach is presented for nanoscale patterning of zinc oxide (ZnO) using electron beam (e-beam) lithography for future nanoelectronic devices and for hard lithographic masks. Zinc acetate (Zn4O(CH3COO)(6)) films were exposed using a scanning electron microscope (SEM), causing decomposition of Zn4O(CH3COO)(6) into ZnO. The exposure of Zn4O(CH3COO)(6) using an electron beam was successfully utilized to fabricate 12 nm zinc oxide lines with a 40 nm pitch on silicon. The chemical composition of zinc acetate (film before e-beam exposure) and ZnO (film after e-beam exposure) was investigated using X-ray spectroscopy (XPS). The Zn 2p shift peaks and the O is contribution confirmed the decomposition of zinc acetate into zinc oxide after exposure. To confirm this transformation into ZnO, the optical band gap of the film was determined and the electrical resistivity of the film was measured. The electrical resistivity and the optical band gap results revealed the transformation into a ZnO film with a band gap of 3.31 eV at room temperature and an electrical resistivity of 91.5 Omega cm. The ZnO patterns were used as a hard mask to etch silicon, and it showed a good selectivity of 27:1 for dry etching silicon using SF6 and C4F8.