Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.
Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.
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Si(001) 衬底上低温生长 Ge 纳米结构的前景广阔。
DOI：
10.1088/1361-6528/aa5b3d
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发表时间：
2017
期刊：
影响因子：
3.5
通讯作者：
Zhong Zhenyang
中科院分区：
文献类型：
--
作者：
Wang Ze;Wang Shuguang;Yin Yefei;Liu Tao;Lin Dongdong;Li De-Hui;Yang Xinju;Jiang Zuimin;Zhong Zhenyang
通过在Si（001）衬底上200 ℃分子束外延Ge，并在400 ℃异位退火，获得了高质量的Ge纳米结构。利用原子力显微镜、透射电子显微镜和拉曼光谱对它们的结构特性进行了综合表征。据公开，它们几乎是无缺陷的，除了在Ge/Si界面处和在随后的Si覆盖层中的一些缺陷。纳米结构中的错配应变基本上是松弛的。观察到Ge纳米结构的强烈光致发光（PL）。详细的分析的功率和温度依赖的PL谱，连同自洽计算，表明限制和高量子效率的激子内的Ge纳米结构。我们的研究结果表明，通过目前可行的路线获得的Ge纳米结构可能具有巨大的潜力，在单片光电集成电路的光电器件。
High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si (001) substrates at 200 C and ex situ annealing at 400 C. Their structural properties are comprehensively characterized by atomic force microscopy, transmission electron microscopy and Raman spectroscopy. It is disclosed that they are almost defect free except for some defects at the Ge/Si interface and in the subsequent Si capping layer. The misfit strain in the nanostructure is substantially relaxed. Dramatically strong photoluminescence (PL) from the Ge nanostructures is observed. Detailed analyses on the power-and temperature-dependent PL spectra, together with a self-consistent calculation, indicate the confinement and the high quantum efficiency of excitons within the Ge nanostructures. Our results demonstrate that the Ge nanostructures obtained via the present feasible route may have great potential in optoelectronic devices for monolithic optical–electronic integration circuits.