Antireflection Microstructured Surface on ZnSe for Mid-infrared Spectral Region
Antireflection Microstructured Surface on ZnSe for Mid-infrared Spectral Region
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DOI：
10.2961/jlmn.2019.02.0001
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发表时间：
2019-09-01
影响因子：
1.1
通讯作者：
Yu, Yong-Sen
中科院分区：
文献类型：
--
作者：
Cao, Jia-Ji;Li, Qian-Kun;Yu, Yong-Sen
采用飞秒激光直写技术在ZnSe衬底上制备了抗反射微结构表面。利用该技术，可以精确地制作出微米级的倒金字塔和倒圆锥阵列。在理想情况下，在9 μ m处测得的透射率比普通ZnSe高约11.3%。这些结果与用几何和衍射场追迹技术计算的结果雅阁较好。
Antireflection microstructured surface were fabricated on ZnSe through a rapid and scalable method which was called femtosecond laser direct writing (FsLDW). With this technology, micrometer level inverted pyramid and cone arrays were fabricated precisely. The measured transmittance were about 11.3% higher compared with the plain ZnSe at 9 mu m in the ideal situation. These results were in good accord with the simulations which were calculated by geometric and diffractive field tracing techniques.