High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
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DOI:
10.1038/s41467-019-09873-9
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发表时间:
2019-04-26
影响因子:
16.6
通讯作者:
Wrachtrup, Joerg
中科院分区:
文献类型:
--
作者:
Nagy, Roland;Niethammer, Matthias;Wrachtrup, Joerg
Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin-optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron-phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its (4)A(2) symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with similar to 1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.