High-Voltage Diamond Vertical Schottky rectifiers
High-Voltage Diamond Vertical Schottky rectifiers
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高压钻石立式肖特基整流器
DOI：
10.1109/ispsd.2005.1488015
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
J. Butler
中科院分区：
文献类型：
--
作者：
W. Huang;T. Chow;J. Yang;J. Butler
我们已经设计，模拟和实验表明，高压垂直金刚石肖特基整流器。整流器上制作的独立的同质外延膜具有显着低的p型掺杂使用剥离过程。通过理论计算确定了漂移区的厚度和掺杂浓度。具有20 μ m外延层的器件已被证明可以阻挡3.7kV，并在290 ℃下以20 V正向压降传导0.6 A/cm 2。估算出了很低的空穴迁移率或掺杂浓度，肖特基势垒高度为0.26eV
We have designed, simulated and experimentally demonstrated high-voltage vertical diamond Schottky rectifiers. The rectifiers were fabricated on free-standing homo-epi films with remarkably low p-type doping using a lift-off process. Theoretical calculations have been performed to determine the thickness and doping concentration of the drift region. Devices with 20mum epi layer have been shown to block 3.7kV and conduct 0.6 A/cm2 at 20V forward drop at 290degC. A very low hole mobility or doping concentration and a Schottky barrier height of 0.26eV have been estimated