Unusual stress behavior in W-incorporated hydrogenated amorphous carbon films
Unusual stress behavior in W-incorporated hydrogenated amorphous carbon films
复制标题
DOI：
10.1063/1.1883328
复制
发表时间：
2005-03
影响因子：
4
通讯作者：
Aiying Wang;H. Ahn;Kwang-Ryeol Lee;Jae-pyoung Ahn
中科院分区：
文献类型：
--
作者：
Aiying Wang;H. Ahn;Kwang-Ryeol Lee;Jae-pyoung Ahn
采用离子束沉积和磁控溅射相结合的方法制备了掺钨氢化非晶碳薄膜，观察到了异常的应力行为。随着钨浓度从0增加到2.8at.%，残余压应力降低了50%，而机械性能没有显著劣化。这是其次是一个快速增加和逐渐减少的残余应力随W浓度的增加。高分辨透射电子显微镜分析和第一性原理计算表明，在W-掺入的非晶碳基体中的W-C键的方向性降低松弛由扭曲的键引起的应力。
Unusual stress behavior was observed in W-incorporated hydrogenated amorphous carbon films prepared by a hybrid process composed of ion-beam deposition and magnetron sputtering. As the tungsten concentration increased from 0 to 2.8at.%, the residual compressive stress decreased by 50%, without significant deterioration in the mechanical properties. This was followed by a rapid increase and a gradual decrease in the residual stress with increasing W concentration. High-resolution transmission electron microscopy analysis and first-principle calculations show that the reduced directionality of the W–C bonds in the W-incorporated amorphous carbon matrix relaxes the stress caused by the distorted bonds.