Dependence of Thickness on Avalanche Characteristics of Te-Doped Amorphous Selenium Photoconductive Target
Dependence of Thickness on Avalanche Characteristics of Te-Doped Amorphous Selenium Photoconductive Target
复制标题
掺碲非晶硒光电导靶材厚度对雪崩特性的依赖性
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
K. Tanioka
中科院分区：
文献类型：
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作者：
W. Park;K. Tanioka
研究了掺碲（Te）非晶硒（a-Se）高增益雪崩非晶光电导体（HARP）靶的雪崩特性随厚度的变化关系。为了提高a-Se HARP光电导靶的量子效率，将掺Te的a-Se光电导层夹在a-Se HARP靶内。利用光电流测量的结果，得到了a-Se HARP靶的雪崩倍增因子和空穴电离系数。雪崩模式中的倍增因子随着电场的增加而指数地增加，在阈值场以上发生雪崩倍增现象。8 μ m厚的a-Se HARP靶在雪崩模式下的量子效率高于2 μm厚以下的薄HARP靶。研究了其光谱响应、衰减滞后和光传输特性。
The thickness dependence of the avalanche characteristics of a tellurium (Te)-doped amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) target is investigated. To improve the quantum efficiency of the a-Se HARP photoconductive target, a Te-doped a-Se photoconductive layer is sandwiched within a-Se HARP target. The avalanche multiplication factor and hole ionization coefficient of the a-Se HARP target are obtained using the result of photocurrent measurement. The multiplication factor in the avalanche mode exponentially increases with increasing electric field by avalanche multiplication phenomena over the threshold field. The quantum efficiency of the 8-µm-thick a-Se HARP target in the avalanche mode is higher than that of the thin HARP target below 2 µm thickness. Also the spectral response, decay lag, and light-transfer characteristics are studied.