B-concentration dependence on anisotropy field of CoFeB thin film for gigahertz frequency use
B-concentration dependence on anisotropy field of CoFeB thin film for gigahertz frequency use
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DOI：
10.1109/tmag.2005.854666
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发表时间：
2005-10-01
影响因子：
2.1
通讯作者：
Yagi, M
中科院分区：
文献类型：
--
作者：
Munakata, M;Aoqui, S;Yagi, M
在高磁矩CoFe薄膜(Co35Fe65、Co25Fe75和Co15Fe85)中添加B，采用同步三射频磁控溅射方法获得了大各向异性场大于500 Oe的薄膜。这些薄膜需要以几千兆赫频率工作的电感核心材料。研究了CoFeB薄膜的磁性和晶体结构。发现B的加入使各向异性场增加到400-700 Oe，并且各向异性场的增加与晶体结构、微晶尺寸和微晶取向的变化有关。结果表明，CoFeB薄膜有可能用于工作在千兆赫兹频率的磁芯和电感。
B was added to the high moment CoFe thin films (Co35Fe65, Co25Fe75, and Co15Fe85) using synchronous triple-RF magnetron sputtering to obtain the films with large anisotropy fields greater than 500 Oe. These films required inductor core materials operating at the frequencies of several gigahertz. Magnetic properties and the crystalline structure of the CoFeB films were investigated. It was found that the B addition increased the anisotropy field to 400-700 Oe and that the increase in anisotropy field was associated with changes in the crystalline structure, crystallite sizes, and crystallite orientation. The results indicated that CoFeB films have potential for use in magnetic cores and inductors operating at gigahertz frequencies.