Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy
Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy
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DOI：
10.1063/1.4800447
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发表时间：
2013-04-08
影响因子：
4
通讯作者：
Fujiwara, Yasufumi
中科院分区：
文献类型：
--
作者：
Lee, Dong-gun;Wakamatsu, Ryuta;Fujiwara, Yasufumi
研究了热退火对有机金属气相外延生长的Eu，Mg共掺杂GaN（GaN：Eu，Mg）的影响。在氮气氛中退火后，Eu-Mg相关的光致发光发射猝灭到13%，而光谱形状没有变化。在随后的氨气氛中退火后，淬灭的发射恢复到原始强度的65%。结合激发发射光谱和时间分辨光致发光的结果表明，猝灭行为归因于非钝化Mg受体诱导的Eu离子的激发4f电子的弛豫的非辐射过程。(C)2013年美国物理学会。
The effects of thermal annealing on Eu,Mg-codoped GaN (GaN:Eu,Mg) grown by organometallic vapor phase epitaxy were investigated. After annealing in nitrogen ambient, Eu-Mg related photoluminescence emission was quenched to 13% without a change in the spectral shape. The quenched emission recovered to 65% of the original intensity after a subsequent annealing in ammonia ambient. Combined excitation emission spectroscopy and time-resolved photoluminescence results revealed that the quenching behavior is attributed to a nonradiative process induced by unpassivated Mg acceptors in the relaxation of excited 4f electrons of Eu ions. (C) 2013 American Institute of Physics.