Spectral response, carrier lifetime, and photocurrents of SiC photocathodes
Spectral response, carrier lifetime, and photocurrents of SiC photocathodes
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SiC 光电阴极的光谱响应、载流子寿命和光电流
DOI：
10.7567/jjap.55.01ac02
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发表时间：
2015
影响因子：
1.5
通讯作者：
T. Ohshima
中科院分区：
文献类型：
--
作者：
M. Kato;K. Miyake;T. Yasuda;M. Ichimura;T. Hatayama;T. Ohshima
碳化硅（SiC）光电阴极是将太阳光转换为氢气的候选材料之一。使用SiC光电阴极的转换效率对于实际应用来说仍然很低。在这项研究中，为了找到低转换效率的根源，我们评估了SiC光电阴极中的载流子寿命和耗尽层宽度，并研究了它们与光电流的关系。此外，我们还观察到光电阴极光电流的光谱响应。从这些结果中，我们发现，载流子寿命和耗尽层宽度的增加是有效的4 H-和6 H-SiC的转换效率的增加。3C-SiC会具有降低有效载流子寿命的缺陷，因此减少这种缺陷对于使用3C-SiC的转换效率的提高是必要的。
Silicon carbide (SiC) photocathode is one of the candidates for energy conversion from the solar light to hydrogen gas. The conversion efficiencies using SiC photocathodes are still low for practical use. In this study, to find origins of low conversion efficiency, we evaluated carrier lifetimes and depletion layer widths in SiC photocathodes and examined relationship of them with photocurrents. In addition, we observed spectral response of the photocurrents from the photocathodes. From these results, we found that enhancement of the carrier lifetime and the depletion layer width is effective for increase of the conversion efficiency for 4H- and 6H-SiC. 3C-SiC would have defects reducing the effective carrier lifetime, and thus decrease of such defects is essential for increase of the conversion efficiency using 3C-SiC.
影响因子：
2.3
作者：
T. Okuda;T. Miyazawa;H. Tsuchida;T. Kimoto;J. Suda
通讯作者：
T. Okuda;T. Miyazawa;H. Tsuchida;T. Kimoto;J. Suda
影响因子：
56.9
作者：
Khan, SUM;Al-Shahry, M;Ingler, WB
通讯作者：
Ingler, WB