Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone
Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone
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DOI：
10.1016/j.orgel.2014.03.024
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发表时间：
2014-06
影响因子：
3.2
通讯作者：
K. Onlaor;T. Thiwawong;B. Tunhoo
中科院分区：
文献类型：
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作者：
K. Onlaor;T. Thiwawong;B. Tunhoo
我们报道了氧化锌纳米粒子 (ZnO NPs) 对基于氧化铟锡/聚乙烯吡咯烷酮 (PVP):ZnO NPs/铝 (ITO/PVP:ZnO/Al) 结构的非易失性一次写入多次读取 (WORM) 存储器件电双稳态行为的影响。非易失性WORM存储器件的最大ON/OFF电流比约为3×103，并且即使在施加电压关闭后器件仍保持在ON状态。此外，还介绍了最佳 ZnO NP 浓度的响应时间和一次写入/连续读取操作的可靠性研究。上升时间和下降时间的响应时间分别约为 3 和 6 μs。通过理论模型分析了器件所有电压区域的传导机制，并讨论了 PVP 基体中电子隧穿的 ZnO 纳米粒子中的电子俘获。
We reported on the influence of zinc oxide nanoparticles (ZnO NPs) on the electrical bistable behavior of nonvolatile write-once-read-many-times (WORM) memory devices based on an indium-tin oxide/polyvinylpyrrolidone (PVP):ZnO NPs/aluminum (ITO/PVP:ZnO/Al) structure. The maximum ON/OFF current ratio of the nonvolatile WORM memory devices was approximately 3 × 103and the devices remained in the ON state even after the applied voltage was turned off. In addition, reliability studies for response time and once write/continuous read operations of the optimal ZnO NPs concentration are presented. The response times of both rise-time and fall-time were about 3 and 6 μs respectively. The conduction mechanisms of all voltage regions of the device were analyzed by theoretical models and electron trapping in the ZnO NPs of the electron tunneling among a PVP matrix was discussed.