Growth and Properties of a Thulium, Holmium‐Codoped LuLiF4 Single Crystal

Growth and Properties of a Thulium, Holmium‐Codoped LuLiF4 Single Crystal
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DOI:
10.1111/j.1551-2916.2007.02008.x
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发表时间:
2007-12
影响因子:
3.9
通讯作者:
F. Jing;K. Shimamura;E. Vı́llora;A. Medvedev;K. Kitamura;K. Asai;A. Sato
F. Jing;K. Shimamura;E. Vı́llora;A. Medvedev;K. Kitamura;K. Asai;A. Sato
中科院分区:
材料科学2区
文献类型:
--
作者:
F. Jing;K. Shimamura;E. Vı́llora;A. Medvedev;K. Kitamura;K. Asai;A. Sato

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用提拉法成功地生长出了Tm、Ho共掺的氟化锂单晶。在相同条件下,与5%Tm、0.5%Ho共掺YLiF4和Lu3Al5O12相比,获得了具有最高斜率效率、最高光光转换效率和较低激光阈值的优良激光性能。
LuLiF4 single crystals codoped with thulium (Tm) and holmium (Ho) were successfully grown by the Czochralski method. The excellent laser performance, in terms of highest slope efficiency, and highest optical-to-optical efficiency and lower laser threshold, was studied in comparison with 5% Tm, 0.5% Ho-codoped YLiF4, and Lu3Al5O12 under the same conditions.