Nanophotonics: Design, fabrication, and operation of nanometric devices using optical near fields
Nanophotonics: Design, fabrication, and operation of nanometric devices using optical near fields
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DOI：
10.1109/jstqe.2002.801738
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发表时间：
2002-07-01
影响因子：
4.9
通讯作者：
Yatsui, T
中科院分区：
文献类型：
--
作者：
Ohtsu, M;Kobayashi, K;Yatsui, T
纳米光子学是一种新型的光学纳米技术，它利用了纳米元件和光学近场之间的局域电磁相互作用。提出了一种纳米光子集成电路（IQ）的原型，在该原型中，光学近场被用作从一个纳米点到另一个纳米点传输信号的载体。本文的每一部分回顾了理论和实验研究，以评估设计，制造和操作每个纳米光子IC器件的可能性。提出了一种基于量子点间光学近场能量转移的关键器件--纳米光子开关。光学近场相互作用表示为Yukawa函数之和，立方CuCl量子点章动的振荡周期估计小于100 ps.为了保证单向（即，不可逆）能量转移，声子耦合引起的次能级内跃迁。因此，状态填充时间估计为22 ps的CuCl量子点。在Born-Markov近似下，这个时间几乎与温度无关。以氯化钠基质中的立方CuCl量子点为测试样品，在15 K温度下，采用近场光谱技术，在近紫外区实现了空间分辨率小于50 nm的近场光学能量转移。这种转移发生在从4.6 nm量子点中激子的最低态到6.3 nm量子点中激子的第一偶极禁戒激发态。为了制造纳米光子器件和IC，提出了使用光学近场的化学气相沉积;这在控制沉积材料的尺寸和位置方面足够精确。一种新的沉积方案下的非共振条件下也证明了它的起源进行了讨论。为了证实在纳米光子IC中使用纳米ZnO点作为光发射器的可能性，使用UV光纤探针以高达55 nm的空间分辨率对单个ZnO纳米晶体进行空间和光谱分辨的光致发光成像，并且发现了由于量子尺寸效应引起的光谱偏移。使用金属涂覆的硅楔形结构开发了纳米级波导。照明（波长：830 nm）激发具有150 nm光束宽度和2.5 μ m传播长度的TM等离子体激元模式。通过在金属化探针尖端引入具有局部表面等离子体共振的金字塔硅结构，开发了一种具有极高通量的纳米光子学关键器件-光学近场探针。达到了高达2.3%的吞吐量。最后，作为纳米光子学在高密度、高速光存储系统中的一个应用，我们开发了一种新型的具有锥形硅探针阵列的接触滑块。该滑块被用于相变记录和阅读，并且证明了短至110 nm的标记长度。
This paper reviews progress in nanophotonics, a novel optical nanotechnology, utilizing local electromagnetic interactions between a few nanometric elements and an optical near field. A prototype of a nanophotonic integrated circuit (IQ is presented, in which the optical near field is used as a carrier to transmit a signal from one nanometric dot to another. Each section of this paper reviews theoretical and experimental studies carried out to assess the possibility of designing, fabricating, and operating each nanophotonic IC device. A key device, the nanophotonic switch, is proposed based on optical near-field energy transfer between quantum dots (QDs). The optical near-field interaction is expressed as the sum of the Yukawa function, and the oscillation period of the nutation of cubic CuCl QDs is estimated to be less than 100 ps. To guarantee one-directional (i.e., irreversible) energy transfer between two resonant levels of QDs, intrasublevel transitions due to phonon coupling are examined by considering a simple two-QD plus phonon heat bath system. As a result, the state-filling time is estimated as 22 ps for CuCl QDs. This time is almost independent of the temperature in the Born-Markov approximation. Using cubic CuCl QDs in a NaCl matrix as a test sample, the optical near-field energy transfer was experimentally verified by near-field optical spectroscopy with a spatial resolution smaller than 50 nm in the near-UV region at 15 K. This transfer occurs from the lowest state of excitons in 4.6-nm QDs to the first dipole-forbidden excited state of excitons in 6.3-nm QDs. To fabricate nanophotonic devices and ICs, chemical vapor deposition using an optical near field is proposed; this is sufficiently precise in controlling the size and position of the deposited material. A novel deposition scheme under nonresonant conditions is also demonstrated and its origin is discussed. In order to confirm the possibility of using a nanometric ZnO dot as a light emitter in a nanophotonic IC, spatially and spectrally resolved photoluminescence imaging of individual ZnO nanocrystallites was carried out with a spatial resolution as high as 55 nm, using a UV fiber probe, and the spectral shift due to the quantum size effect was found. To connect the nanophotonic IC to external photonic devices, a nanometer-scale waveguide was developed using a metal-coated silicon wedge structure. Illumination (wavelength: 830 nm) of the metal-coated silicon wedge (width: 150 nm) excites a TM plasmon mode with a beam width of 150 nm and propagation length of 2.5 mum. A key device for nanophotonics, an optical near-field probe with an extremely high throughput, was developed by introducing a pyramidal silicon structure with localized surface plasmon resonance at the metallized probe tip. A throughput as high as 2.3% was achieved. Finally, as an application of nanophotonics to a high-density, high-speed optical memory system, a novel contact slider with a pyramidal silicon probe array was developed. This slider was used for phase-change recording and reading, and a mark length as short as 110 nm was demonstrated.