Gate drive solutions for CoolGaN™ GIT HEMTs Exploiting the full potential of GaN
Gate drive solutions for CoolGaN™ GIT HEMTs Exploiting the full potential of GaN
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CoolGaN™ GIT HEMT 的栅极驱动解决方案 充分发挥 GaN 的潜力
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
D. Varajao
中科院分区：
文献类型：
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作者：
D. Varajao
本文解释了英飞凌 CoolGaN™ 栅极注入晶体管 (GIT) 技术的栅极驱动要求，该技术基于具有 p-GaN 栅极的混合漏极高电子迁移率晶体管 (HEMT)。讨论了各种驱动解决方案，从标准 RC 耦合驱动器到利用针对 CoolGaN™ GIT HEMT 优化的专用 EiceDRIVER™ 栅极驱动器 IC 的新差分驱动概念。在半桥拓扑中，结合隔离式和非隔离式驱动器 IC 的混合配置可能是一种令人兴奋的替代方案。实际应用示例和电路原理图对本文进行了补充。
This paper explains the gate drive requirements for Infineon’s CoolGaN™ gate injection transistor (GIT) technology, which is based on a hybrid-drain high electron mobility transistor (HEMT) with a p-GaN gate. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated EiceDRIVER™ gate driver ICs optimized for CoolGaN™ GIT HEMTs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated driver ICs could be an exciting alternative. Practical application examples and circuit schematics complement the paper.