Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene
Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene
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DOI：
10.1063/1.1818336
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发表时间：
2004-11-15
影响因子：
4
通讯作者：
Fujiwara, A
中科院分区：
文献类型：
--
作者：
Kuwahara, E;Kubozono, Y;Fujiwara, A
采用C-60和并五苯薄膜异质结制备了双极场效应管(FET)器件。为了实现最佳的双极特性，对C-60/并五苯异质结FET器件的三种结构进行了研究。在C-60和并五苯的中间接触型FET器件中，p沟道工作的迁移率u=6.8×10~(-2)cm~(-2)V~(-1)S(-1)，n沟道工作的迁移率u=1.3×10~(-3)cm~(-2)V~(-1)S(-1)。这种双极型FET器件可用于构成低功耗、高噪声容限和易于设计的实用积木块。(C)2004年美国物理研究所。
Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C-60 and pentacene. Three types of device structures in the C-60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of C-60 and pentacene, the mobility mu in p-channel operation was estimated to be 6.8x10(-2) cm(2) V-1 s(-1), while the mu in n-channel operation was 1.3x10(-3) cm(2) V-1 s(-1). This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design. (C) 2004 American Institute of Physics.