Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress
Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress
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DOI：
10.1109/led.2019.2953235
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发表时间：
2020-01-01
影响因子：
4.9
通讯作者：
Wang, Jianhua
中科院分区：
文献类型：
--
作者：
Liu, Jingcun;Zhang, Guogang;Wang, Jianhua
SiC MOSFET 独特的栅极故障模式经常被识别，但尚未完全理解。在这封信中，失效后的电池检查表明，其主要原因是内部熔化的源铝的 SiO2 介电层出现裂纹。进行电热机械模拟来重现故障转变，并揭示裂纹在早期形成。这种新的失效机制进一步揭示了垂直功率 MOSFET 结构在极高温运行中的脆弱性。
The unique gate failure mode of SiC MOSFETs is often identified but has not been fully understood yet. In this letter, post-failure cell inspections demonstrate that its main cause is the crack at the SiO2 dielectric layer with melted source aluminum inside. An electro-thermal-mechanical simulation is performed to reproduce the failure transition, and it reveals that the crack forms at an early stage. This new failure mechanism further enlightens on the vulnerability of the vertical power MOSFET structure in extremely high-temperature operation.