Ultra-thin CdS buffer layer for efficient Sb2S3-sensitized TiO2 nanorod array solar cells using Sb-thiourea complex solution
Ultra-thin CdS buffer layer for efficient Sb2S3-sensitized TiO2 nanorod array solar cells using Sb-thiourea complex solution
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DOI：
10.1007/s11051-021-05321-2
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发表时间：
2021-08
影响因子：
2.5
通讯作者：
Chao Ying;Fuling Guo;Liang Xu;Kai Lv;Chengwu Shi
中科院分区：
文献类型：
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作者：
Chao Ying;Fuling Guo;Liang Xu;Kai Lv;Chengwu Shi
本文以Cd(NO3)2甲醇溶液和Na2S甲醇/水溶液(v/v，95/5)为原料，采用旋涂辅助连续离子层吸附反应的方法，在TiO2纳米棒阵列上制备了不同自旋周期的致密超薄硫化镉薄膜，并在DMF中用SbCl3-硫脲络合溶液热解制备了Sb2S3。在Sb_2S_3敏化太阳能电池中，具有合适带隙和较高电子迁移率的致密超薄Cd_s薄膜可以抑制电荷复合、TiO_2导带中的电子和Piro-OMeTAD价带中的空穴，并能将光生电子从Sb_2S_3快速传输到TiO_2中。通过自旋循环可以调节硫化镉缓冲层的厚度和微结构，并系统地研究了硫化镉缓冲层的厚度和微结构对相应太阳电池光伏性能的影响。Sb_2S_3敏化的五层硫化镉薄膜太阳电池的光伏转换效率为5.71%，开路电压为0.53 nV，短路光电流密度为18.20 mA/cm−2，填充因数为58.99%，平均光伏转换效率为5.59 ± 0.08%， 为0.53 ±0.01nV，JSC值为17.72 ± 0.43 mA/cm−2，短路光电流密度为59.05 ± 0.65%。
In this paper, the compact and ultra-thin CdS thin films with different spin cycles are deposited on the TiO2nanorod arrays via spin-coated-assisted successive ionic layer adsorption and reaction method using Cd(NO3)2solution in methanol and the Na2S solution in methanol/water (v/v, 95/5), and the Sb2S3prepared by pyrolysis using SbCl3-thiourea complex solution in DMF. In the Sb2S3-sensitized solar cells, the compact and ultra-thin CdS thin films with suitable band gap and higher electron mobility can suppress the charge recombination, the electrons of the TiO2conduction band, and the holes of thespiro-OMeTAD valence band, and it can also transport photogenerated electrons rapidly from Sb2S3to TiO2. The thickness and microstructure of the CdS buffer layers can be adjusted by spin cycles and the influence of the thickness and microstructure of the CdS buffer layers on the photovoltaic property of the corresponding solar cell was systematically investigated. The Sb2S3-sensitized solar cells with 5 layers CdS thin film achieved the best photovoltaic conversion efficiency (PCE) of 5.71% along with the open-circuit voltage (Voc) of 0.53 V, short-circuit photocurrent density (Jsc) of 18.20 mA cm−2, fill factor (FF) of 58.99%, and the average PCE of 5.59 ± 0.08% with theVocof 0.53 ± 0.01 V,Jscof 17.72 ± 0.43 mA cm−2, and FF of 59.05 ± 0.65%.