Dielectric, piezoelectric and dc bias characteristics of Bi-doped PZT multilayer ceramic actuator

Dielectric, piezoelectric and dc bias characteristics of Bi-doped PZT multilayer ceramic actuator
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Bi掺杂PZT多层陶瓷驱动器的介电、压电和直流偏置特性

DOI:
10.1016/j.matchemphys.2020.123605
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发表时间:
2020-11
影响因子:
4.6
通讯作者:
Xiangcheng Chu
Xiangcheng Chu
中科院分区:
材料科学3区
文献类型:
--
作者:
Shuhao Yan;Chaochao Sun;Qianyue Cui;Mingzhe He;Willh;y;Ruanbin Wang;Junjie Hao;Xiangcheng Chu

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在这项研究中,微结构,介电,压电和直流偏置性能的Bi掺杂PZT(PZTB)的多层压电致动器,进行了讨论。电介质单层膜的厚度约为70 μm,晶粒尺寸分布相对均匀。大的直流偏置场的应用导致在多层压电陶瓷的介电常数和介电损耗的降低。居里温度(Tc)向一个更高的值和稳定的温度依赖性的介电性能的位移下观察到的直流偏置场。参数γ的增加表明相变的扩散程度增强。在150 V的低驱动电压下,大位移达到多层压电陶瓷厚度的0.11%,表明所研究的多层压电致动器的商业应用的潜力。本研究提供了具体的实验数据,以评估实际应用的Bi掺杂PZT多层压电驱动器。
In this study, the microstructure, dielectric, piezoelectric and dc bias properties of the Bi-doped PZT (PZTB) multilayer piezoelectric actuators, have been discussed. The thickness of the dielectric monolayer was about 70 μm, and a relatively uniform distribution of the grain size was developed. The application of a large dc bias field resulted in a decrease in the dielectric constant and dielectric loss of the multilayer piezoelectric ceramics. The shift of the Curie temperature (Tc) towards a higher value and stabilized temperature-dependent dielectric properties were observed under the dc bias field. The increase in parameterγsuggested the enhancement of the degree of diffuseness of the phase transition. The large displacement reached 0.11% of the thickness of the multilayer piezoelectric ceramic under a low driving voltage of 150 V, indicating the potential of commercial applications of the studied multilayer piezoelectric actuators. This study provides specific experimental data to evaluate the practical application of the Bi-doped PZT multilayer piezoelectric actuators.
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