Effects of Y2O3 on Temperature Stability of Acceptor-Doped BaTiO3
Effects of Y2O3 on Temperature Stability of Acceptor-Doped BaTiO3
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DOI：
10.1143/jjap.44.1310
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发表时间：
2005-03
影响因子：
1.5
通讯作者：
Y. Song;J. Hwang;Y. Han
中科院分区：
文献类型：
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作者：
Y. Song;J. Hwang;Y. Han
研究了Y_2O_3对受主掺杂BaTiO_3介电材料温度稳定性的影响。掺杂1mol%Y2O3的样品具有最高的介电常数。与未掺杂的样品(∼为1.5µm)相比，掺入1mol%Y_2O_3的样品(∼为0.6µm)的晶粒度明显减小。与1mol%的Y2O3相比，每个样品的晶粒度略有不同。随着Y_2O_3含量的增加，居里点逐渐向高温方向移动。Y_2O_3的加入改善了受主掺杂BaTiO_3-Y_2O_3系的介电常数在研究的整个温度范围内(-55-150°C)的温度依赖性，其电容曲线的温度系数满足X8R的要求。
Effects of Y2O3 on the temperature stability of acceptor-doped BaTiO3 dielectrics were studied. The sample doped with 1 mol% Y2O3 exhibited the highest dielectric constant. A substantial reduction in grain size was observed in the specimen with 1 mol% Y2O3 (∼0.6 µm), compared with the undoped specimen (∼1.5 µm). Each specimen with greater than 1 mol% Y2O3 showed a slight difference in grain size, compared with 1 mol% Y2O3. As the Y2O3 content was increased, the Curie point progressively moved to higher temperatures. The addition of Y2O3 improved the temperature dependence of the dielectric constants of the acceptor doped BaTiO3–Y2O3 system over the entire temperature range studied (-55–150°C) and the temperature coefficient of capacitance curves satisfied the X8R requirements above 3 mol% Y2O3.