Microtwin formation in gallium arsenide by iron ion implantation and amorphization by annealing
Microtwin formation in gallium arsenide by iron ion implantation and amorphization by annealing
复制标题
通过铁离子注入和退火非晶化在砷化镓中形成微孪晶
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
Y. Hayashi
中科院分区：
文献类型：
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作者：
M. Taniwaki;T. Yoshiie;H. Koide;M. Ichihashi;N. Yoshimoto;H. Yoshida;Y. Hayashi
通过透射电子显微镜观察了铁离子注入剂量为4×1014 cm−2和1×1015 cm−2的砷化镓在673 K退火前后的横截面视图。通过注入4×1014 cm−2的离子，在表面下形成了微孪晶。在注入剂量为1×1015 cm−2的样品中，表面以下的区域被非晶化，并且在非晶层和晶体基质之间观察到薄的微孪晶层。电子衍射图和高分辨率多束点阵图像表明，微孪晶的结构是ABCA'CB'ABC沿着111方向的原子堆叠。在这两个样品中，微孪晶层转变为非晶结构，在673 K退火30分钟。有人建议，在砷化镓注入铁，这是非常不同的注入与其他离子物种的行为，可能是由于共价键合铁的配位数。
Cross‐sectional views of iron ion‐implanted gallium arsenide to doses of 4×1014 cm−2 and 1×1015 cm−2 were observed by transmission electron microscopy before and after annealing at 673 K. Microtwins were formed below the surface by implantation of 4×1014 ions cm−2. In the sample implanted to the dose of 1×1015 cm−2 , the region below the surface was amorphized and a thin microtwin layer was observed between the amorphous layer and the crystalline matrix. The electron diffraction pattern and the high‐resolution multibeam lattice image showed that the structure of the microtwin is an atomic stacking of ABCA‘CB‘ABC along the 〈111〉 direction. In both samples, the microtwin layer transformed to the amorphous structure by annealing at 673 K for 30 min. It is suggested that the behavior in gallium arsenide implanted with iron, which is much different from that implanted with the other ion species, may be attributed to the coordination number of the covalent bonding iron.