Highly (001) oriented MnAl thin film fabricated on CoGa buffer layer
Highly (001) oriented MnAl thin film fabricated on CoGa buffer layer
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DOI：
10.1063/1.5130452
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发表时间：
2020-02
期刊：
影响因子：
1.6
通讯作者：
D. Oshima;T. Kato;S. Iwata
中科院分区：
文献类型：
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作者：
D. Oshima;T. Kato;S. Iwata
采用不同的热处理工艺在CoGa缓冲层上制备了厚度为5 nm和15 nm的（001）取向MnAl薄膜。CoGa层的插入即使在5 nm的MnAl厚度下也能有效地获得正方形面外磁滞回线。在CoGa上沉积Mn和Al，衬底温度为200°C，退火温度为500° C，得到了高度（001）取向的MnAl薄膜。对于5 nm和15 nm厚的MnAl，垂直磁各向异性估计分别为7.4±0.2和8.5±0.4 Merg/cc。较低的各向异性在5 nm厚的MnAl可能是由于MnAl和CoGa层之间的相互扩散。5 nm-和15 nm厚的（001）取向的MnAl薄膜上制备的CoGa缓冲层与各种热处理。CoGa层的插入即使在5 nm的MnAl厚度下也能有效地获得正方形面外磁滞回线。在CoGa上沉积Mn和Al，衬底温度为200°C，退火温度为500° C，得到了（001）取向的MnAl薄膜。对于5 nm和15 nm厚的MnAl，垂直磁各向异性估计分别为7.4±0.2和8.5±0.4 Merg/cc。5 nm厚的MnAl中较低的各向异性可能是由于MnAl和CoGa层之间的相互扩散。
5 nm- and 15 nm-thick (001) oriented MnAl films were fabricated on CoGa buffer layers with various thermal treatments. The insertion of the CoGa layer was effective to obtain the square out-of-plane hysteresis loop even in the MnAl thickness of 5 nm. Highly (001) oriented MnAl film was obtained by depositing Mn and Al on CoGa at a substrate temperature of 200°C followed by annealing at 500°C. The perpendicular magnetic anisotropy was estimated to be 7.4±0.2 and 8.5±0.4 Merg/cc for 5 nm- and 15 nm-thick MnAl, respectively. Lower anisotropy in 5 nm-thick MnAl may be due to the interdiffusion between the MnAl and CoGa layers.5 nm- and 15 nm-thick (001) oriented MnAl films were fabricated on CoGa buffer layers with various thermal treatments. The insertion of the CoGa layer was effective to obtain the square out-of-plane hysteresis loop even in the MnAl thickness of 5 nm. Highly (001) oriented MnAl film was obtained by depositing Mn and Al on CoGa at a substrate temperature of 200°C followed by annealing at 500°C. The perpendicular magnetic anisotropy was estimated to be 7.4±0.2 and 8.5±0.4 Merg/cc for 5 nm- and 15 nm-thick MnAl, respectively. Lower anisotropy in 5 nm-thick MnAl may be due to the interdiffusion between the MnAl and CoGa layers.