Three-dimensional photonic crystals based on double-angled etching and wafer-fusion techniques
Three-dimensional photonic crystals based on double-angled etching and wafer-fusion techniques
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DOI：
10.1063/1.2355463
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发表时间：
2006-09
影响因子：
4
通讯作者：
Shigeki Takahashi;M. Okano;M. Imada;S. Noda
中科院分区：
文献类型：
--
作者：
Shigeki Takahashi;M. Okano;M. Imada;S. Noda
我们提出了一种结合晶圆融合技术和两阶段角度蚀刻工艺实现三维光子晶体的方法。与基板成45°角的蚀刻会产生木桩（或堆叠条纹）结构，然后可以通过晶圆融合技术引入人工缺陷和光发射器，从而大大减少所需的工艺数量。在这里，我们通过计算点缺陷腔的透射特性和质量因子来确定所需的光子晶体厚度。此外，我们证明了在低温下使用电感耦合等离子体刻蚀系统进行角度刻蚀的可行性。
We propose a method for the realization of three-dimensional photonic crystals by combining a wafer-fusion technique with a two-stage angled etching process. Etching at an angle of 45° to the substrate creates woodpile (or stacked striped) structures, and artificial defects and light emitters can then be introduced by the wafer-fusion technique, thereby considerably reducing the number of processes required. Here, we determine the required thickness of the photonic crystals by calculating the transmission properties and quality factors of point-defect cavities. Furthermore, we demonstrate the feasibility of angled etching using an inductively coupled plasma-etching system at cryogenic temperatures.