Strontium silicide termination and silicate epitaxy on (001) Si
Strontium silicide termination and silicate epitaxy on (001) Si
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(001) Si 上的硅化锶端接和硅酸盐外延
DOI：
10.1116/1.1434968
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
J. Budai
中科院分区：
文献类型：
--
作者：
D. Norton;C. Park;Y. Lee;J. Budai
本文研究了用激光分子束外延技术在SrSi_2终端的（001）Si上外延生长（Sr，Ba）基氧化物。反射高能电子衍射（RHEED）证实了形成一个相称的亚单层（Ba，Sr）Si 2时，锶和钡烧蚀目标被用作金属源。激光烧蚀脉冲之间的硅化物RHEED峰强度的稳定性表明，尽管所需的高温，亚单层SrSi 2覆盖率在形成过程中是相对稳定的。虽然在低温下有利于经由Ba金属烧蚀和O2通量在SrSi 2终止的表面上的BaO的后续生长，但在高于550 °C的温度下观察到氧化物形成的外延硅酸盐的形成。 X-射线衍射证实了高温氧化形成的Ba 2SiO 4膜是面内取向的。这些结果表明，虽然外延BaO可以实现SrSi 2终止的Si，界面上可能容易形成硅酸盐后…
We have investigated the epitaxial growth of (Sr,Ba)-based oxides on SrSi2-terminated (001) Si using laser-molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) confirms the formation of a commensurate submonolayer of (Ba,Sr)Si2 when strontium and barium ablation targets are used as the metal sources. Stability of the silicide RHEED peak intensity between laser ablation pulses indicates that the submonolayer SrSi2 coverage is relatively stable during formation despite the required high temperatures. While the subsequent growth of BaO via Ba metal ablation and O2 flux on the SrSi2-terminated surface is favored at low temperatures, the formation of an epitaxial silicate is observed for oxide formation at temperatures above 550 °C. X-ray diffraction confirms that the Ba2SiO4 film formed with elevated temperature oxidation is in-plane aligned. These results suggest that while epitaxial BaO can be realized on SrSi2-terminated Si, the interface may be susceptible to silicate formation upon...