Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
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DOI：
10.1038/nphys994
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发表时间：
2008-08-01
期刊：
影响因子：
19.6
通讯作者：
Rogge, S.
中科院分区：
文献类型：
--
作者：
Lansbergen, G. P.;Rahman, R.;Rogge, S.
以原子精度建造结构的能力是纳米技术的定义特征之一。然而，要实现真正的原子级功能，需要控制单个原子的波函数的能力.在这里，我们研究了一种可以实现这一点的方法。通过收集和分析硅FinFET沟道中单个施主原子的输运谱，我们提出了一种新型混合分子系统的出现的实验证据。我们的实验和模拟表明，晶体管的栅极电位可以用来控制其施主原子的核电位和附近的量子阱之间的单电子施主态的杂化程度。此外，我们的理论分析使我们能够确定的捐助者（砷）的物种注入到每个设备以及由栅极施加的限制的程度。
The ability to build structures with atomic precision is one of the defining features of nanotechnology. Achieving true atomic- level functionality, however, requires the ability to control the wavefunctions of individual atoms. Here, we investigate an approach that could enable just that. By collecting and analysing transport spectra of a single donor atom in the channel of a silicon FinFET, we present experimental evidence for the emergence of a new type of hybrid molecule system. Our experiments and simulations suggest that the transistor's gate potential can be used to control the degree of hybridization of a single electron donor state between the nuclear potential of its donor atom and a nearby quantum well. Moreover, our theoretical analysis enables us to determine the species of donor (arsenic) implanted into each device as well as the degree of confinement imposed by the gate.