High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET
High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET
复制标题
高能尾电子作为深亚微米 N-MOSFET 最坏情况热载流子应力退化的机制
DOI：
10.1109/led.2003.814011
复制
发表时间：
2003
影响因子：
4.9
通讯作者：
C. Ling
中科院分区：
文献类型：
--
作者：
D. Ang;T. Phua;H. Liao;C. Ling
基于灵敏地调制电子能量分布的高能量尾部的浓度的实验证据揭示了在中高栅极应力电压（V/sub g/）范围中的重要趋势，其中对于给定的漏极应力电压V/sub d/，看到器件退化随着所施加的V/sub g/而连续增加。当漏极区附近的氧化物场随着V/sub g/接近V/sub d/而变得越来越有利时，最坏情况的退化点从V/sub g//spl ap/V/sub d//2到V/sub g/=V/sub d/的偏移（描绘了与衬底电流不相关的行为）是由高能尾电子注入到栅极氧化物中引起的。这封信提供了一个改进的框架，了解最坏情况下的热载流子应力退化的深亚微米N-MOSFET在低偏置条件下。
Experimental evidence, based on sensitively modulating the concentration of the high-energy tail of the electron energy distribution, reveals an important trend in the mid-to-high gate stress voltage (V/sub g/) regime, where device degradation is seen to continuously increase with the applied V/sub g/, for a given drain stress voltage V/sub d/. The shift in the worst-case degradation point from V/sub g//spl ap/V/sub d//2 to V/sub g/=V/sub d/, depicting an uncorrelated behavior with the substrate current, is caused by the injection of the high-energy tail electrons into the gate oxide, when the oxide field near the drain region becomes increasingly favorable as V/sub g/ approaches V/sub d/. This letter offers an improved framework for understanding the worst-case hot-carrier stress degradation of deep submicrometer N-MOSFETs under low bias condition.