High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures
High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures
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DOI：
10.1063/1.2335390
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发表时间：
2006-08-07
影响因子：
4
通讯作者：
Grandjean, N.
中科院分区：
文献类型：
--
作者：
Gonschorek, M.;Carlin, J-F.;Grandjean, N.
在未掺杂、晶格匹配的Al0.82In0.18N/GaN场效应晶体管异质结构中获得了1170 cm（2）/Vs的室温电子迁移率，同时保持了Al0.82In0.18N/GaN材料系统固有的高（2.6 +/- 0.3）× 10（13）cm（-2）电子气密度。这导致210 Ω/平方的二维薄层电阻。这些层的高迁移率，通过在蓝宝石衬底上的金属有机气相外延生长，获得由于插入优化的AlN中间层，减少合金相关的界面粗糙度散射。(c)2006年，美国物理学会。
Room temperature electron mobility of 1170 cm(2)/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6 +/- 0.3)x10(13) cm(-2) electron gas density intrinsic to the Al0.82In0.18N/GaN material system. This results in a two-dimensional sheet resistance of 210 Omega/square. The high mobility of these layers, grown by metal-organic vapor phase epitaxy on sapphire substrate, is obtained thanks to the insertion of an optimized AlN interlayer, reducing the alloy related interface roughness scattering. (c) 2006 American Institute of Physics.