A Field Effect Based Hydrogen Sensor for Low and High Concentrations
A Field Effect Based Hydrogen Sensor for Low and High Concentrations
复制标题
基于场效应的低浓度和高浓度氢气传感器
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
J. Szeponik
中科院分区：
文献类型：
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作者：
W. Moritz;V. Fillipov;A. Vasiliev;G. Cherkashinin;J. Szeponik
采用薄层工艺制备了一种硅基半导体传感器结构Pd/LaF 3/Si 3 N4/SiO2/Si。该传感器可用于室温下的氢气检测。因此，与最好的低功耗氢传感器相比，功耗降低了10倍。与其他传感器不同，它可用于测量极低和极高的氢分压。检测限确定为0.5 ppm。在接近和高于低爆炸水平（LEL）的4%的氢气在空气中的高浓度的测量证明。提出了一种实现传感器长寿命的方法。
A silicon based semiconductor sensor structure Pd/LaF3/Si3N4/SiO2/Si was prepared using thin layer technology. The sensor can be used for hydrogen detection at room temperature. Therefore, the power consumption is reduced by a factor 10 compared to the best low power consumption hydrogen sensors. In contrast to other sensors it can be used for measurements at very low and high hydrogen partial pressure. The limit of detection was determined to be 0.5 ppm. Measurements at high concentrations near to and above the Lower Explosion Level (LEL) of 4 % hydrogen in air are demonstrated. A method to achieve long lifetime of the sensor was developed.