Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films
Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films
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DOI：
10.1063/1.122853
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发表时间：
1998-12-21
影响因子：
4
通讯作者：
Chang, RPH
中科院分区：
文献类型：
--
作者：
Cao, H;Zhao, YG;Chang, RPH
本文报道了一种半导体激光器，它的谐振腔是在高度无序的增益介质中由于强光散射而“自形成”的。激光器是由氧化锌多晶薄膜生长在非晶熔融石英基板。在光泵浦下，在类似于380 nm的紫外波长处发生激光。获得了多次散射形成的激光谐振腔的真实图像。这些结果表明使用无序半导体微结构作为相干光发射的替代源的可能性。(C)1998年美国物理学会。[S0003-6951（98）00750-5]。
A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of similar to 380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission. (C) 1998 American Institute of Physics. [S0003-6951(98)00750-5].