ALD Grown Aluminum Oxide Submonolayers in Dye-Sensitized Solar Cells: The Effect on Interfacial Electron Transfer and Performance
ALD Grown Aluminum Oxide Submonolayers in Dye-Sensitized Solar Cells: The Effect on Interfacial Electron Transfer and Performance
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DOI:
10.1021/jp204886n
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发表时间:
2011-08
影响因子:
3.7
通讯作者:
Liisa J. Antila;Mikko J. Heikkilä;V. Mäkinen;Niko Humalamäki;M. Laitinen;V. Linko;P. Jalkanen;J. Toppari;Viivi Aumanen;M. Kemell;P. Myllyperkiö;K. Honkala;H. Häkkinen;M. Leskelä;J. Korppi-Tommola
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作者:
Liisa J. Antila;Mikko J. Heikkilä;V. Mäkinen;Niko Humalamäki;M. Laitinen;V. Linko;P. Jalkanen;J. Toppari;Viivi Aumanen;M. Kemell;P. Myllyperkiö;K. Honkala;H. Häkkinen;M. Leskelä;J. Korppi-Tommola
Effects of atomic layer deposited (ALD) aluminum oxide barriers on electron injection, recombination reactions, and efficiency of dye-sensitized solar cells were studied. The amorphous AlOx submonolayers prepared on nanocrystalline 2 μm thick TiO2 anatase film were characterized by high-resolution transmission electron microscopy. Time-of-flight elastic recoil detection method was employed to study the growth of similar AlOx layers on planar anatase films. Density functional theory calculations of the first ALD cycle over a (101) anatase surface revealed atomic scale roughness of the deposited layer owing to unequal adsorption sites and lateral repulsions between adsorbed precursor molecules. Calculations also indicate that the holes in the first AlOx layer allow triiodide but not the ruthenium bipyridyl sensitizer to reach the TiO2 surface. After the first deposition cycle the dye binds to AlOx and is in average about 0.2 nm farther from the TiO2 surface than when binding to the bare TiO2 surface. Increa...