Room-temperature light emission from a highly strained Si/Ge superlattice
Room-temperature light emission from a highly strained Si/Ge superlattice
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DOI：
10.1063/1.1618377
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发表时间：
2003-10-13
影响因子：
4
通讯作者：
Cirlin, GE
中科院分区：
文献类型：
--
作者：
Zakharov, ND;Talalaev, VG;Cirlin, GE
讨论了分子束外延产生Si/ ge超晶格（SL）的形成。选择特定的生长参数，优化垂直堆叠的格岛周期性结构。优化后的SLs在室温下表现出较强的光致发光，波长在1.55 nm附近。这种发光现象可以用电子在微带中的重组和锗岛中的空穴来解释。利用透射电镜技术对生长参数对SL的形貌和晶体结构的影响进行了分析。结果表明，在SL结构中掺杂锑可以改善其结构性能和光学性能。(C) 2003年美国物理研究所。
We discuss the formation of a Si/Ge-superlattice (SL) generated by molecular beam epitaxy. Specific growth parameter were chosen to optimize the periodic structure of vertically stacked Ge islands. Optimized SLs show a strong photoluminescence at a wavelength in the region of 1.55 mum up to room temperature. The luminescence is explained by a recombination of electrons in a miniband and holes localized in the Ge islands. The morphology and the crystal structure of the SL, which are influenced by the growth parameters, were analyzed by transmission electron microscopy techniques. It is demonstrated that doping of the SL structure by antimony improves both structural and optical properties. (C) 2003 American Institute of Physics.