Porous silicon layers and its oxide for the silicon-on-insulator structure
Porous silicon layers and its oxide for the silicon-on-insulator structure
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用于绝缘体上硅结构的多孔硅层及其氧化物
DOI：
10.1063/1.337686
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
T. Itoh
中科院分区：
文献类型：
--
作者：
H. Takai;T. Itoh
研究了在多孔硅层上生长的硅薄膜的晶体特性。基于卢瑟福背散射光谱和截面透射电子显微镜的结果，提出了多孔硅层上硅外延生长的模型。在我们的模型中，外延层/多孔硅界面附近区域和外延层表面附近区域的主要缺陷分别是位错和堆垛层错。多孔硅层的氧化速率比体硅快约80-130倍，并且氧化的多孔硅层的蚀刻速率几乎等于体氧化物的蚀刻速率。氧化多孔Si层的有效介电常数与阳极电流密度密切相关，范围为3.8~4.0。
Crystalline properties of Si films grown on porous Si layers were investigated. Based on the results obtained by Rutherford backscattering spectroscopy and cross‐sectional transmission electron microscopy, a model of Si epitaxial growth on a porous Si layer is proposed. In our model dominant defects in the region near the epitaxial layer/porous Si interface and in the one near the surface in the epitaxial layer are dislocations and stacking faults, respectively. The oxidation rate of the porous Si layers is about 80–130× faster than that of the bulk Si, and the etching rate of the oxidized porous Si layers is almost equal to that of the bulk oxide. The effective dielectric constants of the oxidized porous Si layers have a close relation to the anodic current density, ranging from 3.8 to 4.0.