Development of ArF immersion exposure tool
Development of ArF immersion exposure tool
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DOI：
10.1117/12.600492
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发表时间：
2005-05
期刊：
影响因子：
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通讯作者：
H. Nakano;H. Hata;Kazuhiro Takahashi;M. Arakawa;T. Chibana;T. Honda;Keiko Chiba;Sunao Mori
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文献类型：
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作者：
H. Nakano;H. Hata;Kazuhiro Takahashi;M. Arakawa;T. Chibana;T. Honda;Keiko Chiba;Sunao Mori
具有193 nm光源的浸没式光刻系统在工业中正在被追求。本文介绍了我们对曝光系统的各个方面所做的研究结果，并给出了曝光系统的发展现状以及所面临的挑战。如果浸没流体（即，超纯水）的流速存在波动，则晶片载台的定位精度可能受到影响。类似地，流体中的温度变化可显著影响投影光学器件的成像性能。我们开发了一种超纯水供给控制系统，可以直接连接到现有晶圆厂的超纯水线，并实现高稳定性的恒温、恒流控制。最后给出了该系统的评价结果。光致抗蚀剂材料如光酸产生剂PAG溶解到水中是透镜污染的原因。曝光工具供应商在污染控制方面面临的挑战是规定允许的溶解量。为此，湿污染测试正在进行中，本文将讨论迄今为止的结果。建立了两种浸没曝光验证工具：双光束干涉曝光工具和全视场α位扫描仪。使用阿尔法工具，包括边缘芯片的整个晶圆CD均匀性的评估结果将被呈现。此外，将显示缺陷分析结果，特别是气泡对图案化的影响。
Immersion lithography systems with a 193 nm light source are being pursued in the industry. This paper presents the results of the study we have made on various aspects of the exposure system, and gives the status of exposure system development together with the challenges involved. If there are fluctuations in the flow rate of immersion fluid, i.e. ultrapure water, the positioning accuracy of the wafer stage may be affected. Similarly, temperature changes in the fluid can significantly influence imaging performance of the projection optics. We have developed an ultrapure water supply control system which allows direct connection to the ultrapure water line of the existing fabs and enables constant-temperature, constant-flow rate control of the water with high stability. The evaluation results of this system will be shown. Photoresist materials such as photo-acid generator, PAG, dissolved into the water are a cause of concern for lens contamination. The challenge for exposure tool suppliers in terms of contamination control is to specify the permissible dissolution amount. To this end, wet contamination tests are in progress, and the findings to date will be discussed in this paper. Two verification tools for immersion exposure are built: a two-beam interference exposure tool and a full-field alpha-site scanner. Using the alpha tool, the evaluation results of full wafer CD uniformity including edge dies will be presented. Also, defect analysis results will be shown, specifically the impact of air bubbles on patterning.