Thickness dependence of mobility in pentacene thin-film transistors
Thickness dependence of mobility in pentacene thin-film transistors
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DOI：
10.1002/adma.200402077
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发表时间：
2005-07-18
影响因子：
29.4
通讯作者：
Malliaras, GG
中科院分区：
文献类型：
--
作者：
Ruiz, R;Papadimitratos, A;Malliaras, GG
当并五苯的六个单层沉积在栅极电介质上时，并五苯晶体管的场效应迁移率饱和。这种饱和不是由岛的形成引起的，因为已经发现生长的早期阶段以逐层的方式发生，并且层完成持续超过六个单层（见图）。
The field-effect mobility of pentacene transistors saturates when six monolayers of pentacene are deposited on the gate dielectric. This saturation is not caused by the formation of islands, as the early stages of growth have been found to take place in a layer-by-layer fashion, and layer completion continues well past six monolayers (see Figure).