Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ∼ Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼
Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ∼ Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼
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3D Si-MOSFET 优异的低噪声特性的根本原因 〜 由于量子效应对 1/f 噪声产生的沟道内电荷质心的影响 〜
DOI：
10.1109/iedm.2011.6131627
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
K. Ohmori
中科院分区：
文献类型：
--
作者：
W. Feng;R. Hettiarachchi;Y. Lee;S. Sato;K. Kakushima;M. Sato;K. Fukuda;M. Niwa;K. Yamabe;K. Shiraishi;H. Iwai;K. Ohmori
我们制作了硅纳米线（NW）非场效应管，并用它们实验证明了三维mosfet优越的噪声特性。通过对nwfet与平面fet的仔细比较，我们发现控制反转通道中电子密度质心的位置是获得低量级噪声谱密度的关键。Schrödinger和泊松方程的自一致计算清楚地揭示了nwfet由于量子约束而在电子分布方面的优势，特别是在小栅极过载（Vg-Vt）条件下。此外，通过增加Vd， NWFET表现出优于平面FET的噪声特性的范围可以扩展到更大的Vg- vt，因为漏极附近的有效Vg减小了。
We fabricated Si nanowire (NW) nFETs, and used them to experimentally demonstrate the superior noise properties of 3D MOSFETs. By carefully comparing the NWFETs with planar FETs, we found that it was critical to control the location of the centroid of the electron density in the inversion channel in order to obtain a noise spectral density with low magnitude. Self-consistent calculations of the Schrödinger and Poisson equations clearly reveal the advantages of NWFETs in electron distribution due to quantum confinement, specifically in the small gate-overdrive (Vg-Vt) condition. Moreover, by increasing Vd, the range where the NWFET exhibits superior noise properties to a planar FET can be extended to larger Vg-Vt because the effective Vg near the drain is reduced.