Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method
Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method
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DOI：
10.1016/j.jlumin.2009.10.005
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发表时间：
2010-03
影响因子：
3.6
通讯作者：
Jun Zheng;W. Ding;C. Xue;Y. Zuo;B. Cheng;Jun Yu;Q. Wang;G. Wang;H. Guo
中科院分区：
文献类型：
--
作者：
Jun Zheng;W. Ding;C. Xue;Y. Zuo;B. Cheng;Jun Yu;Q. Wang;G. Wang;H. Guo
E2SiO5thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5at% based on Rutherford backscattering measurement in as-deposited Er–Si–O film. X-ray diffraction measurement revealed that Er2SiO5crystalline structure was formed as sample treated at 1100°C for 1h in O2atmosphere. Through proper thermal treatment, the 1.53μm Er3+-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800°C. Analysis of pump-power dependence of Er3+PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 1021(photons/cm2/sec). Temperature-dependent photoluminescence (PL) of Er2SiO5was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er2SiO5films has been demonstrated with Er3+concentration of 1022/cm3, and it opens a promising way towards future Si-based light source for Si photonics.
