Reducing the incubation effects for rear side laser etching of fused silica
Reducing the incubation effects for rear side laser etching of fused silica
复制标题
DOI：
10.1016/j.apsusc.2014.01.115
复制
发表时间：
2014-05
影响因子：
6.7
通讯作者：
K. Zimmer;M. Ehrhardt;P. Lorenz;Xi Wang;C. Vass;T. Csizmadia;B. Hopp
中科院分区：
文献类型：
--
作者：
K. Zimmer;M. Ehrhardt;P. Lorenz;Xi Wang;C. Vass;T. Csizmadia;B. Hopp
激光诱导背面湿法和干法刻蚀（LIBWE和LIBDE）被开发用于透明材料的精确刻蚀。然而，LIBWE和LIBDE的特点，如孵化效应和蚀刻深度饱和，分别，这可能是不利的超精密加工的应用程序。因此，LIBDE和LIBWE的技术相结合，以这样的方式，电介质材料被提供了一个薄膜改性的表面之前，通过LIBWE蚀刻。为了这个目标，熔融石英样品覆盖一个薄的铬膜进行表面改性之前，在丙酮中用25 ns KrF准分子激光脉冲LIBWE蚀刻。观察到第一脉冲的蚀刻。在足以用于烃LIBWE的激光能量密度（1 J/cm 2）下，LIBDE的蚀刻速率比LIBWE高得多。因此，蚀刻速率随着脉冲数增加而降低，直到10。表面形貌非常强烈地依赖于激光能量密度和脉冲数。在高能量密度和低脉冲数下实现了平滑的蚀刻。然而，不均匀的，波浪状的蚀刻表面和微米图案的形成，观察到中等和低激光能量密度。
Laser-induced back side wet and dry etching (LIBWE and LIBDE) were developed for precise etching of transparent materials. However, LIBWE and LIBDE feature characteristics such as incubation effects and etching depth saturation, respectively, that can be unfavourable for applications in ultra-precision machining. Therefore, the techniques of LIBDE and LIBWE were combined in such a manner that the dielectric material was supplied with a thin-film-modified surface before etching by LIBWE.With this goal fused silica samples were covered with a thin chromium film for surface modification before LIBWE etching in acetone with 25 ns KrF excimer laser pulses. Etching with the first pulse was observed. At laser fluences adequate for hydrocarbon LIBWE (1 J/cm2) the etching rate for LIBDE is much higher than for LIBWE. In consequence, the etching rate decreases with increasing pulse number up to ten. The surface morphology depends very strong on the laser fluence and the pulse number. Smooth etchings were achieved at high fluences and low pulse numbers. However, uneven, wavy etched surfaces and micron pattern formation were observed for moderate and low laser fluences.