High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit
High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit
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DOI：
10.1103/physrevlett.113.220501
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发表时间：
2014-11-24
影响因子：
8.6
通讯作者：
Lucas, D. M.
中科院分区：
文献类型：
--
作者：
Harty, T. P.;Allcock, D. T. C.;Lucas, D. M.
我们使用存储在Ca - 43(+)超精细“原子钟”态的囚禁离子量子比特，以远高于容错量子计算所需最低阈值的保真度实现了所有单量子比特操作。我们测量得到量子比特态制备和单次读出的综合保真度为99.93%，记忆相干时间T - 2* = 50秒，平均单量子比特门保真度为99.9999%。这些结果是在室温下的微型表面阱中取得的，且没有使用磁场屏蔽或动态解耦技术来克服技术噪声。
We implement all single-qubit operations with fidelities significantly above the minimum threshold required for fault-tolerant quantum computing, using a trapped-ion qubit stored in hyperfine "atomic clock" states of Ca-43(+). We measure a combined qubit state preparation and single-shot readout fidelity of 99.93%, a memory coherence time of T-2* = 50 sec, and an average single-qubit gate fidelity of 99.9999%. These results are achieved in a room-temperature microfabricated surface trap, without the use of magnetic field shielding or dynamic decoupling techniques to overcome technical noise.