Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode
Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode
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DOI：
10.1063/1.1942636
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发表时间：
2005-05-30
影响因子：
4
通讯作者：
Dawson, MD
中科院分区：
文献类型：
--
作者：
Jeon, CW;Gu, E;Dawson, MD
我们报告了将紫外光固化聚合物微透镜阵列集成到包含64364个微像素元件的矩阵可寻址、368 nm波长的发光二极管器件上。微透镜的几何和光学参数被仔细地选择，以允许从每个微像素的高度发散的发射被准直成直径约8 μ m的窄光束，超过500 μ m的距离。该器件被证明是一种可编程的曝光工具，其中图案可编程阵列既起光源又起光掩模的作用。将由直径为16 μ m、间距为30 μ m的两个圆盘组成的简单图案转移到i线光致抗蚀剂中。(c)2005年美国物理学会。
We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64364 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-mu m m diam, over a distance of more than 500 mu m. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-mu m diam and 30-mu m spacing was transferred into an i-line photoresist. (c) 2005 American Institute of Physics.