Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing
Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing
复制标题
电容耦合对电感耦合碳氟化合物等离子体处理的影响
DOI：
10.1116/1.582054
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
G. Oehrlein
中科院分区：
文献类型：
--
作者：
M. Schaepkens;N. R. Rueger;J. Beulens;Xi Li;T. Standaert;P. J. Matsuo;G. Oehrlein
本文介绍了使用各种等离子体和表面诊断的电感耦合碳氟化合物等离子体中的电容耦合量系统地变化的研究中获得的结果。结果表明，在一定的源功率下，随着电容耦合量的增加，等离子体密度减小，电子温度升高。发现电介质耦合窗口被侵蚀的速率与峰-峰RF电压和离子电流密度成比例，并且发现电介质窗口侵蚀影响所得的等离子体气相化学。等离子体电学和化学特性的变化对电感耦合碳氟化合物等离子体中发生的表面工艺（例如碳氟化合物沉积、碳氟化合物蚀刻、SiO2蚀刻和Si蚀刻）具有很大的影响。此外，我们展示了如何选择性SiO2到Si蚀刻过程的变化与不同的电容耦合。
This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decreases while the electron temperature increases as the amount of capacitive coupling is increased at a constant source power level. The rate at which the dielectric coupling window is eroded is found to scale with both the peak-to-peak rf voltage and the ion current density, and the dielectric window erosion is found to influence the resulting plasma gas-phase chemistry. The changes in plasma electrical and chemical characteristics have a large impact on the surface processes occurring in inductively coupled fluorocarbon plasmas such as fluorocarbon deposition, fluorocarbon etching, SiO2 etching and Si etching. Further, we show how the selective SiO2-to-Si etch process changes with varying capacitive coupling.