Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures
Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures
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DOI：
10.1063/1.4952708
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发表时间：
2016-05
影响因子：
3.2
通讯作者：
M. Matys;R. Stoklas;J. Kuzmík;B. Adamowicz;Zenji Yatabe;T. Hashizume
中科院分区：
文献类型：
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作者：
M. Matys;R. Stoklas;J. Kuzmík;B. Adamowicz;Zenji Yatabe;T. Hashizume
我们首次对电介质/III - N族异质结界面处的界面态电子俘获截面σ进行了定量表征。我们开发了一种新方法，该方法基于使用低于半导体带隙的光子能量进行的光辅助电容 - 电压测量。对以Al₂O₃、SiO₂或SiN薄膜作为绝缘体沉积在Al含量（x）在较大取值范围内变化的AlGaN层上的AlGaN/GaN金属 - 绝缘体 - 半导体异质结（MISH）结构进行了分析。此外，我们还研究了一种Al₂O₃/InAlN/GaN MISH结构。在绝缘体沉积之前，对AlGaN和InAlN表面进行了不同的处理。我们发现所有这些结构的σ都在5×10⁻¹⁹到10⁻¹⁶ cm²之间。此外，我们揭示了电介质/AlₓGa₁₋ₓN界面的σ随着x的增加而增大。我们表明，多声子发射和级联过程都可以解释所得到的结果。
We performed, for the first time, quantitative characterization of electron capture cross sections σ of the interface states at dielectric/III-N heterojunction interfaces. We developed a new method, which is based on the photo-assisted capacitance-voltage measurements using photon energies below the semiconductor band gap. The analysis was carried out for AlGaN/GaN metal-insulator-semiconductor heterojunction (MISH) structures with Al2O3, SiO2, or SiN films as insulator deposited on the AlGaN layers with Al content (x) varying over a wide range of values. Additionally, we also investigated an Al2O3/InAlN/GaN MISH structure. Prior to insulator deposition, the AlGaN and InAlN surfaces were subjected to different treatments. We found that σ for all these structures lies in the range between 5×10−19 and 10−16 cm2. Furthermore, we revealed that σ for dielectric/AlxGa1−xN interfaces increases with increasing x. We showed that both the multiphonon-emission and cascade processes can explain the obtained results.