Characteristics of epitaxial ZnO films on sapphire substrates deposited using RF-magnetron sputtering
Characteristics of epitaxial ZnO films on sapphire substrates deposited using RF-magnetron sputtering
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射频磁控溅射蓝宝石衬底上外延 ZnO 薄膜的特性
DOI：
10.1143/jjap.36.2277
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发表时间：
1997
影响因子：
1.5
通讯作者：
Ki–Wan Kim
中科院分区：
文献类型：
--
作者：
Y. J. Kim;Ki–Wan Kim
采用射频磁控溅射法在蓝宝石（01overline12）面上生长了ZnO外延薄膜，并研究了不同射频功率下溅射薄膜的性质。在蓝宝石的（01\overline12）面上产生（11\overline20）ZnO膜的表面。ZnO薄膜具有足够光滑的表面，可用作表面声波（SAW）滤波器。通过在蓝宝石衬底（01\overline12）面上ZnO薄膜沿c轴方向沿着传播测量了声表面波特性。声表面波滤波器的观察进行了非调谐条件下。第0和第1模式的中心频率分别在300 MHz和400 MHz处观察到。
We have grown ZnO epitaxial films on the (01overline12)\) plane of sapphire using rf-magnetron sputtering and studied the properties of films sputtered at different rf powers. A surface of (11\overline20) ZnO film was produced on a (01\overline12) plane of sapphire. The (11\overline20) films of ZnO have smooth enough surfaces for use as surface acoustic wave (SAW) filters. The surface acoustic wave properties were measured by propagation along the c axis of ZnO films on the (01\overline12) plane of sapphire substrates. An observation of the SAW filter was carried out under untuned conditions. Center frequencies of the 0th and 1st modes were observed at 300 MHz and 400 MHz, respectively.