Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions
Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions
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DOI：
10.1063/1.3688039
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发表时间：
2012-02
影响因子：
3.2
通讯作者：
M. Kodzuka;T. Ohkubo;K. Hono;S. Ikeda;H. Gan;H. Ohno
中科院分区：
文献类型：
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作者：
M. Kodzuka;T. Ohkubo;K. Hono;S. Ikeda;H. Gan;H. Ohno
研究了B浓度对（Co25Fe75）100−xBx/MgO/(Co25Fe75)100−xBx （x = 22和33）伪自旋阀（P-SV）磁隧道结（MTJs）隧穿磁阻（TMR）的影响。在室温下，x = 22和33的最佳退火MTJs的TMR比分别为340%和170%。高分辨率透射电镜（HRTEM）观察显示，x = 33时，MTJ中MgO势垒的织构较弱（001）。在（Co25Fe75）67B33中加入大量B后，底部电极仍未完全结晶，而（001）织化MgO与（Co25Fe75）78B22电极之间有良好的外延。
The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co25Fe75)100−xBx/MgO/(Co25Fe75)100−xBx (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x = 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co25Fe75)67B33, while good epitaxy was observed between (001) textured MgO and (Co25Fe75)78B22 electrodes.