I–V–T (current–voltage–temperature) characteristics of the Au/Anthraquinone/p-Si/Al junction device
I–V–T (current–voltage–temperature) characteristics of the Au/Anthraquinone/p-Si/Al junction device
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Au/蒽醌/p-Si/Al结器件的I-V-T（电流-电压-温度）特性
DOI：
10.1016/j.jallcom.2013.09.006
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
D. Ekinci
中科院分区：
文献类型：
--
作者：
Z. Çaldıran;A. Deniz;F. Coşkun;Ş. Aydoğan;Ali Yeşildağ;D. Ekinci
在80 ~ 280k的温度范围内对Au/蒽醌/p-Si/Al结器件进行了电流电压测量。在280 K时，蒽醌膜将p-Si的空间电荷区从0.77 eV提高到0.85 eV，从而提高了Au/p-Si/Al的有效势垒高度。对Au/蒽醌/p-Si/Al结器件的电流-电压测量结果表明，在低温下，势垒高度降低，理想因数增加。理想因子和势垒高度随温度的变化与界面的空间不均匀性有关。在理查德森图中发现了非线性行为，从理查德森图线性区域的斜率和纵坐标截距分别确定了活化能（Ea）和理查德森常数（A *）的值为0.08 eV和3.19 × 10−8A cm−2K−2。从张函数得到的串联电阻值与温度密切相关。
The current–voltage measurements of the Au/Anthraquinone/p-Si/Al junction device have been carried out in the temperature range of 80–280 K. It has been observed that the anthraquinone film increases the effective barrier height of the Au/p-Si/Al by influencing the space charge region of p-Si from 0.77 eV to 0.85 eV at 280 K. The current–voltage measurements of the Au/Anthraquinone/p-Si/Al junction device show a decrease of the barrier height and an increase in the ideality factor at low temperatures. The dependence of the ideality factor and barrier height on temperature has been attributed the spatial inhomogeneity in the interface. The non-linearity behavior has been seen in the Richardson plots and the values of activation energy (Ea) and the Richardson constant (A∗) has been determined as 0.08 eV and 3.19 × 10−8A cm−2K−2from the slope and the intercept at ordinate of the linear region of Richardson plot, respectively. The values of the series resistance obtained from Cheung functions are strongly temperature-dependent.