Growth of antiferromagnetic oxide thin films

Growth of antiferromagnetic oxide thin films
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反铁磁氧化物薄膜的生长

DOI:
10.1002/9783527630370.ch2
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发表时间:
2010
期刊:
ChemInform
影响因子:
--
通讯作者:
P. Luches
P. Luches
中科院分区:
--
文献类型:
--
作者:
S. Valeri;S. Altieri;P. Luches

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由于具有挑战性的基本电子性质,从催化到自旋电子学等不同领域的潜在应用,以及它们在生态系统中发生的化学和物理过程中的重要作用,对金属氧化物的研究兴趣稳步增长[1-4]。从磁性的角度来看,过去和现在的许多努力都集中在二元金属氧化物(mexy)薄膜上,其中包含三维过渡金属,如Mn, Fe, Co或Ni,因为它们在磁性器件技术中的重要性。与铁磁体不同,反铁磁体不表现出净磁化,不易被外部磁场控制或与外部磁场耦合。因此,大多数用于技术应用的磁学研究都集中在铁磁体上。然而,由于磁性和结构顺序之间复杂的相互作用,反铁磁体本质上是非常有趣的磁性系统,这提出了新的挑战,并可能导致新的应用。反铁磁(AF)薄膜也研究了它们在磁性器件中的应用,在磁性器件中它们可以被纳入数据存储系统。正如许多研究所指出的那样,AF材料的独特性质在降维系统中尤为明显[3-8]。因此,人们对AF过渡金属氧化物薄膜的制备和研究进行了特别的努力。主要研究了薄膜厚度(即垂直约束)对超薄AF膜中的AF-超顺磁转变、AF层中与厚度相关的nsamel温度(TN)以及多层中铁质膜、反铁质膜和非磁性膜的耦合。研究发现,磁性有序、有序温度和界面矩等关键性能取决于薄膜的化学计量、缺陷和形貌,取决于晶体有序程度,以及薄膜与衬底之间或多层膜之间界面的清晰度,而这些在很大程度上取决于制备方法[3,4,6,7]。
Because of the challenging fundamental electronic properties, of the potential applications in different areas ranging from catalysis to spin electronics and of their significant role in the chemical and physical processes taking place in the ecosystem, there is a steadily growing interest in the research on metal-oxides [1–4]. From the magnetic point of view, much of the past and current efforts have focused on binary metal-oxide (MexOy) thin films containing 3d transition metals like Mn, Fe, Co, or Ni, because of their importance in magnetic devices technology.Antiferromagnets, unlike ferromagnets, do not exhibit a net magnetization and cannot be readily controlled by, or coupled to, an external magnetic field. Thus, most of the studies of magnetism for technological applications were focused on ferromagnets. Antiferromagnets, however, are intrinsically very interesting magnetic systems due to the complex interplay between magnetic and structural order, which presents new challenges and can lead to novel applications. Antiferromagnetic (AF) films are also studied for their application in magnetic devices, where they can be incorporated into data storage systems. The unique properties of AF materials are especially evident in systems of reduced dimensionality, as pointed out by a number of studies [3–8]. Therefore, special efforts have been addressed to the preparation and study of AF transition-metal oxide films. Phenomena influenced by the film thickness (ie, by the vertical confinement) were mainly investigated, namely, the AF-superparamagnetic transition in ultrathin AF films, the thickness-dependent Néel temperature (TN) in AF layers, and the coupling of ferro-, antiferro-, and nonmagnetic films in multilayers. Critical properties such as magnetic order, ordering temperature, and interfacial moments were found to depend on the stoichiometry, defectivity, and morphology of the films, on the extent of the crystalline order, and on the sharpness of the interfaces between the film and the substrate or between different films in multilayers, which are to a great extent determined by the preparation method [3, 4, 6, 7].