Growth of antiferromagnetic oxide thin films
Growth of antiferromagnetic oxide thin films
复制标题
反铁磁氧化物薄膜的生长
DOI:
10.1002/9783527630370.ch2
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发表时间:
2010
期刊:
影响因子:
--
通讯作者:
P. Luches
中科院分区:
文献类型:
--
作者:
S. Valeri;S. Altieri;P. Luches
Because of the challenging fundamental electronic properties, of the potential applications in different areas ranging from catalysis to spin electronics and of their significant role in the chemical and physical processes taking place in the ecosystem, there is a steadily growing interest in the research on metal-oxides [1–4]. From the magnetic point of view, much of the past and current efforts have focused on binary metal-oxide (MexOy) thin films containing 3d transition metals like Mn, Fe, Co, or Ni, because of their importance in magnetic devices technology.Antiferromagnets, unlike ferromagnets, do not exhibit a net magnetization and cannot be readily controlled by, or coupled to, an external magnetic field. Thus, most of the studies of magnetism for technological applications were focused on ferromagnets. Antiferromagnets, however, are intrinsically very interesting magnetic systems due to the complex interplay between magnetic and structural order, which presents new challenges and can lead to novel applications. Antiferromagnetic (AF) films are also studied for their application in magnetic devices, where they can be incorporated into data storage systems. The unique properties of AF materials are especially evident in systems of reduced dimensionality, as pointed out by a number of studies [3–8]. Therefore, special efforts have been addressed to the preparation and study of AF transition-metal oxide films. Phenomena influenced by the film thickness (ie, by the vertical confinement) were mainly investigated, namely, the AF-superparamagnetic transition in ultrathin AF films, the thickness-dependent Néel temperature (TN) in AF layers, and the coupling of ferro-, antiferro-, and nonmagnetic films in multilayers. Critical properties such as magnetic order, ordering temperature, and interfacial moments were found to depend on the stoichiometry, defectivity, and morphology of the films, on the extent of the crystalline order, and on the sharpness of the interfaces between the film and the substrate or between different films in multilayers, which are to a great extent determined by the preparation method [3, 4, 6, 7].